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january 2007 rev 2 1/11 11 order codes part number marking package packing STP12IE90F4 p12ie90f4 to220fp-4l tube STP12IE90F4 emitter switched bipolar transistor esbt ? 900 v - 12 a - 0.083 ? general features high voltage / high current cascode configuration low equivalent on resistance very fast-switch up to 150 khz squared rbsoa up to 900v very low c iss driven by r g = 47 ? very low turn-off cross over time applications flyback smps for adapter flyback / forward smps for desktop description the STP12IE90F4 is manufactured in monolithic esbt technology, aimed to provide best perfor- mances in high frequency / high voltage applica- tions. it is designed for use in gate driven based topolo- gies. internal schematic diagrams v cs(on) i c r cs(on) 1v 12a 0.083 w to220fp-4l www.st.com
STP12IE90F4 2/11 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STP12IE90F4 electrical ratings 3/11 1 electrical ratings table 2. thermal data table 1. absolute maximum rating symbol parameter value unit v cs(ss) collector-source voltage (v bs = v gs = 0 v) 900 v v bs(os) base-source voltage (i c = 0, v gs = 0 v) 30 v v sb(os) source-base voltage (i c = 0, v gs = 0 v) 17 v v gs gate-source voltage 17 v i c collector current 12 a i cm collector peak current (t p < 5ms) 36 a i b base current 6 a i bm base peak current (t p < 5ms) 10 a p tot total dissipation at t c = 25c 21 w t stg storage temperature -40 to 150 c t j max. operating junction temperature 150 c symbol parameter value unit r thj-case thermal resistance junction-case __ max 6 c/w
electrical characteristics STP12IE90F4 4/11 2 electrical characteristics (t case = 25c unless otherwise specified) table 3. electrical characteristics symbol parameter test conditions min. typ. max. unit i cs(ss) collector-source current (v bs = v gs = 0) v ce = 900v 100 a i bs(os) base-source current (i c = 0, v gs = 0) v bs(os) = 30v 10 a i sb(os) source-base current (i c = 0, v gs = 0) v sb(os) = 17v 100 a i gs(os) gate-source leakage v gs = 17v 100 na v cs(on) collector-source on voltage v gs = 10v _ i c = 12a i b = 2.4a v gs = 10v _ i c = 6a i b = 0.6a 1 0.6 v v h fe dc current gain v gs = 10v _ i c = 12a v cs = 1v v gs = 10v _ i c = 6a _ v cs = 1v 5 15 v bs(on) base source on voltage v gs = 10v _ i c = 12a i b = 2.4a v gs = 10v _ i c = 6a _ i b = 0.6a 1.5 1.2 v v v gs(th) gate threshold voltage v bs = v gs ______ i b = 250 a 23 4v c iss input capacitance v cs =25v f =1mhz v gs =0v 520 pf q gs(tot) gate-source charge v cs =25v v gs =10v v cb =0v i c =4a 21.3 nc t s t f inductive load storage time fall time v gs =10v r g =47 ? v clamp =720v t p =4 s i c =6a i b =1.2a 610 10 ns ns t s t f inductive load storage time fall time v gs =10v r g =47 ? v clamp =720v t p =4 s i c =6a i b =0.6a 360 10 ns ns v csw maximum collector- source voltage switched without snubber r g =47 ? h fe =5 i c = 12a 900 v
STP12IE90F4 electrical characteristics 5/11 2.1 electrical characteristics (curves) v cs(dyn) collector-source dynamic voltage (500ns) v cc =v clamp =400v v gs =10v i c = 6a i b = 1.2a t peak =500ns r g =47 ? i bpeak = 6a (i c ) 3.37 v v cs(dyn) collector-source dynamic voltage (1 s) v cc =v clamp =400v v gs =10v i c = 6a i b = 1.2a t peak =500ns r g =47 ? i bpeak = 6a (i c ) 1.75 v table 3. electrical characteristics symbol parameter test conditions min. typ. max. unit figure 1. dc current gain figure 2. collector-source on voltage figure 3. collector-source on voltage figure 4. base-source on voltage
electrical characteristics STP12IE90F4 6/11 figure 5. reverse biased soa figure 6. dynamic collector-emitter voltage figure 7. inductive load switching time figure 8. inductive load switching time
STP12IE90F4 electrical characteristics 7/11 2.2 test circuits figure 9. static v cs(on) test circuits figure 10. inductive load switching and rbsoa test circuit
package mechanical data STP12IE90F4 8/11 3 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
STP12IE90F4 package mechanical data 9/11 dim. mm. min. typ max. a 4.30 4.70 a1 2.60 3 a2 1.30 1.50 1.70 b 0.50 0.70 b1 1.05 b2 1.30 b3 1.25 b4 1.50 c 0.45 0.50 0.60 d 15.50 15.90 e9.80 10.20 e 2.29 2.54 2.79 e1 7.62 h1 6.30 6.70 l13.60 l1 3.30 l2 15.40 15.80 dia p 3 3.40 q 3.30 3.50 to220fp-4l mechanical data
revision history STP12IE90F4 10/11 4 revision history table 4. revision history date revision changes 28-jul-2006 1 initial release. 16-jan-2007 2 new graphics
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